Home ProductsU Shaped Photoelectric Sensor

5 Mm Retro Reflective Sensor , Through Beam Photoelectric Sensor Excellent IC Chip

Certification
China QINGDAO DASS SENSOR TECHNOLOGY CO.,LTD. certification
China QINGDAO DASS SENSOR TECHNOLOGY CO.,LTD. certification
I'm Online Chat Now

5 Mm Retro Reflective Sensor , Through Beam Photoelectric Sensor Excellent IC Chip

5 Mm Retro Reflective Sensor , Through Beam Photoelectric Sensor Excellent IC Chip
5 Mm Retro Reflective Sensor , Through Beam Photoelectric Sensor Excellent IC Chip

Large Image :  5 Mm Retro Reflective Sensor , Through Beam Photoelectric Sensor Excellent IC Chip

Product Details:

Place of Origin: CHINA
Brand Name: DASS
Certification: CE
Model Number: DS-ES

Payment & Shipping Terms:

Minimum Order Quantity: 1000 PCS
Price: USD4-6/PC
Packaging Details: CARTON
Delivery Time: 7 DAYS
Payment Terms: T/T
Supply Ability: 30000 PCS ONE MONTHS
Detailed Product Description
Photoelectric Sensor: Anti-light Interference U-type Photoelectric Sensor: Inspection Frequency>2KHZ
Photoelectric Slot Sensor: Anti-power Interference Service Environment: Ability To Adapt To Environmental Pollution
Weight: 29g Color: Black
High Light:

laser break beam sensor

,

u type photo sensor

 

U-shaped Photoelectric Sensor /U-type Photoelectric Sensor/Photoelectric Slot Sensor

 

Photomicrosensor with built-in amplifier and attached cable reduces external light interference.
• Light modulation effectively reduces external light interference.
• Wide operation voltage range: 5 to 24 VDC
• For the most recent information on models that have been certified for safety standards,Easy operation monitoring with bright light indicator.

• Easy operation monitoring with bright light indicator.

 

Model

NPN

DS-ES61P DS-ES62 DS-ES63 DS-ES64
PNP DS-ES61P DS-ES62P DS-ES63P DS-ES64P
Sensing distance
(slot width)
5mm(slot width)
Sensing object Opaque: 2 × 0.8 mm min.
Differential distance 0.025mm
Light source GaAs infrared LED (pulse lighting) with a peak wavelength of 940 nm      
output way N=NPN.NO.NC P=PNP.NO.NC
voltage 5 to 24 VDC ±10%, ripple (p-p): 10% max.
Current consumption Average: 35 mA max(NPN).; Peak: 30 mA max.(PNP)      
Ambient illumination 1,000 lx max. with incandescent light on the surface of the receiver      
Ambient temperature range Operating: −25 to +55°C
Storage: −30 to +80°C
Ambient humidity range Operating: 5% to 85%
Storage: 5% to 95%
Vibration resistance Destruction: 20 to 2000 Hz,
1.5-mm double amplitude for 2 h each in X, Y, and Z directions
Shock resistance Destruction: 500 m/s2 for 3 times
each in X, Y, and Z directions
Degree of protection IEC IP50
Connecting method Pre-wired (standard cable length: 1 m)
Response frequency 1 KHZ min(Average 3 KHZ)
Weight 29g
Control output NPN voltage output:
Load power supply voltage: 5 to 24 VDC
Load current: 100 mA max.
OFF current: 0.8 mA max.
100 mA load current with a residual voltage of 0.8 V max.
40 mA load current with a residual voltage of 0.4 V max, PNP voltage output:
Load power supply voltage: 5 to 24 VDC
Load current: 50 mA max.
OFF current: 1.3 mA max.
50 mA load current with a residual voltage of 1.3 V max
Material Shell material:PBT/ABS
Pervious to light part:PC

 

 

5 Mm Retro Reflective Sensor , Through Beam Photoelectric Sensor Excellent IC Chip 0

 

Contact Details
QINGDAO DASS SENSOR TECHNOLOGY CO.,LTD.

Contact Person: sales

Send your inquiry directly to us (0 / 3000)